• DocumentCode
    3565044
  • Title

    9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS

  • Author

    Ahmad, Zeshan ; Lisauskas, Alvydas ; Roskos, Hartmut G. ; Kenneth, K.O.

  • Author_Institution
    Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
  • fYear
    2014
  • Abstract
    9.74-THz fundamental electronic detection of Far-Infrared (FIR) radiation is demonstrated. The detection along with that at 4.92THz was realized using Schottky-barrier diode detection structures formed without any process modifications in CMOS. Peak optical responsivity (Rv) of 383 and ~14V/W at 4.92 and 9.74THz have been measured. The Rv at 9.74THz is 14X of that for the previously reported highest frequency electronic detection. The shot noise limited NEP at 4.92 and 9.74THz is ~0.43 and ~2nW/√Hz, respectively.
  • Keywords
    CMOS integrated circuits; Schottky diodes; infrared detectors; CMOS integrated circuit; Schottky barrier diode detection; electronic far infrared detection; frequency 4.92 THz; frequency 9.74 THz; Antennas; CMOS integrated circuits; Detectors; Finite impulse response filters; Measurement by laser beam; Noise; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7046982
  • Filename
    7046982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565044