DocumentCode
3565086
Title
Fabrication of integrated micrometer platform for thermoelectric measurements
Author
Haras, Maciej ; Lacatena, V. ; Morini, F. ; Robillard, J.-F. ; Monfray, S. ; Skotnicki, T. ; Dubois, E.
Author_Institution
IEMN, Villeneuve d´Ascq, France
fYear
2014
Abstract
Good electrical performance of Silicon enables high harvested power density allowing Silicon to compete with conventional thermoelectric materials such as Bi2Te3 or Sb2Te3. High value of thermal conductivity eliminating the use of Silicon in thermoelectricity is no longer an unbeatable drawback since the possibility of reduction has been established and confirmed. Thermal conductivity reduction by a factor 3 over bulk value is reported in 70nm thick Silicon. The Silicon thermal conductivity can be reduced even 100× over bulk when using dedicated patterning which can block the propagation of phonons responsible for heat transport [3]. This reduction will have significant influence in launching industrialization of CMOS compatible thermogenerators.
Keywords
CMOS integrated circuits; elemental semiconductors; energy harvesting; heat transfer; microfabrication; micrometry; phonons; silicon; thermal conductivity; CMOS compatible thermogenerator launching industrialization; Si; Silicon electrical performance; heat transport; high harvested power density; integrated micrometer platform fabrication; phonons propagation; silicon thermal conductivity reduction; thermoelectric measurement; Conductivity; Heating; Silicon; Temperature measurement; Thermal conductivity; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047012
Filename
7047012
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