Title :
The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching
Author :
Howell, Robert S. ; Stewart, Eric J. ; Freitag, Ron ; Parke, Justin ; Nechay, Bettina ; Cramer, Harlan ; King, Matthew ; Gupta, Shalini ; Hartman, Jeffrey ; Snook, Megan ; Wathuthanthri, Ishan ; Ralston, Parrish ; Renaldo, Karen ; Henry, H. George ; Clark
Author_Institution :
Northrop Grumman Electron. Syst., Linthicum, MD, USA
Abstract :
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of IMAX>2.7 A/mm, VPINCH = -8V, with RON=0.41 Ω-mm and COFF=0.19 pF/mm, for an RF switch FOM of FCO=2.1 THz.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; semiconductor superlattices; wide band gap semiconductors; 3D gate; GaN; RF switching; SLCFET; high performance transistor topology; super-lattice castellated field effect transistor; super-lattice channel; transistor measurements; Capacitance; Field effect transistors; Logic gates; Micromechanical devices; Radio frequency; Switches; Switching circuits;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047033
