DocumentCode :
3565110
Title :
A circuit level variability prediction of basic logic gates in advanced trigate CMOS technology
Author :
Hsieh, E.R. ; Hung, C.M. ; Wang, T.Y. ; Chung, Steve S. ; Huang, R.M. ; Tsai, C.T. ; Yew, T.R.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2014
Abstract :
Variability has been one of the major scaling issues in advancing the CMOS technology. In this paper, a variation model from the device level to circuit level has been proposed and demonstrated on advanced trigate FinFETs. First, a simple and accurate transport model was developed to model variability at the device level. It was then implemented in Spice and the calculation of variation of basic logic gate building block was demonstrated with only W/L and the slopes, Avt, Agm, in the Pelgrom plot, as inputs. Finally, a unified simple analytic form was developed to predict the variability of various basic logic circuits regardless of the number of devices and the complexity of circuits.
Keywords :
CMOS logic circuits; MOSFET; SPICE; logic gates; CMOS device scaling; Pelgrom plot; Spice implementation; basic logic gates; circuit level variability prediction; device level variability; trigate CMOS technology; trigate FinFET; variation model; CMOS integrated circuits; Data models; Integrated circuit modeling; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEDM.2014.7047036
Filename :
7047036
Link To Document :
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