DocumentCode :
3565122
Title :
Progressive vs. abrupt reset behavior in conductive bridging devices: A C-AFM tomography study
Author :
Celano, U. ; Goux, L. ; Belmonte, A. ; Giammaria, G. ; Opsomer, K. ; Detavernier, C. ; Richard, O. ; Bender, H. ; Irrera, F. ; Jurczak, M. ; Vandervorst, W.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2014
Abstract :
We investigated the physical origin of progressive and abrupt reset in conductive bridging memories. The conductive filaments for both types of reset are observed in 3D using C-AFM tomography, enabling the observation of broken and non-broken filaments respectively for abrupt and progressive reset.
Keywords :
atomic force microscopy; random-access storage; C-AFM tomography; CBRAM; abrupt reset behavior; broken filament; conductive bridging device; conductive filament; nonbroken filament; progressive reset behavior; Aluminum oxide; Electrodes; Materials; Switches; Three-dimensional displays; Tomography; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEDM.2014.7047048
Filename :
7047048
Link To Document :
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