Title :
Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells
Author :
Chen, C.Y. ; Goux, L. ; Fantini, A. ; Redolfi, A. ; Clima, S. ; Degraeve, R. ; Chen, Y.Y. ; Groeseneken, G. ; Jurczak, M.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We demonstrate the strong impact of reset amplitude and duration on the endurance degradation of scaled TiNTa2O5Ta cells, which from ab-initio and electrical switching simulation is attributed to O interaction with TiN. Clear improvements are obtained using (i) shorter write pulses, (ii) low O-affinity Ru bottom electrode, and or (iii) higher O-affinity HfO2 dielectric.
Keywords :
hafnium compounds; resistive RAM; semiconductor device reliability; tantalum compounds; titanium compounds; HfO2; TiN-Ta2O5-Ta; electrical switching simulation; electrode materials; programming pulses; scaled RRAM cells; Degradation; Electrodes; Materials; Standards; Switches; Temperature; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047049
