DocumentCode
3565162
Title
Gated and STI defined ESD diodes in advanced bulk FinFET technologies
Author
Chen, S.-H. ; Linten, D. ; Lee, J.-W. ; Scholz, M. ; Hellings, G. ; Sibaja-Hernandez, A. ; Boschke, R. ; Song, M.-H. ; See, Y. ; Groeseneken, Guido ; Thean, A.
Author_Institution
imec, Leuven, Belgium
fYear
2014
Abstract
In CMOS scaling roadmap, bulk FinFET is the mainstream technology for sub-20nm nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant impacts on intrinsic ESD performance. In this work, two types of ESD protection diodes are studied and the corresponding TCAD simulations bring an in-depth understanding on the failure mechanism of these ESD diodes.
Keywords
CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor diodes; technology CAD (electronics); CMOS scaling roadmap; ESD protection diodes; STI defined ESD diodes; TCAD simulations; bulk FinFET technology; failure mechanism; intrinsic ESD performance; Anodes; Cathodes; Electrostatic discharges; FinFETs; Layout; Logic gates; Silicides;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047089
Filename
7047089
Link To Document