DocumentCode
3565164
Title
Reliability challenges for the 10nm node and beyond
Author
Stathis, James H. ; Wang, M. ; Southwick, R.G. ; Wu, E.Y. ; Linder, B.P. ; Liniger, E.G. ; Bonilla, G. ; Kothari, H.
Author_Institution
IBM Res., Yorktown Heights, NY, USA
fYear
2014
Abstract
Technology elements for the 10nm node and beyond include FINFETs on bulk or SOI, replacement gate process, multi-workfunction gate stacks, self-aligned contacts, and alternative channel materials. This paper describes current trends and how improved physics understanding and models can enable us to anticipate the effects of scaling on reliability even in early stages of development.
Keywords
MOSFET; semiconductor device models; semiconductor device reliability; FINFET-on-SOI; FINFET-on-bulk; channel material; improved physics; multiworkfunction gate stacks; reliability challenge; replacement gate process; self-aligned contacts; size 10 nm; Degradation; Electric breakdown; Human computer interaction; Logic gates; Materials; Metals; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047091
Filename
7047091
Link To Document