Title :
Will reliability limit moore´s law?
Author :
Oates, Anthony S.
Author_Institution :
TSMC Ltd., Hsinchu, Taiwan
Abstract :
Up to the present time reliability has not limited the rapid evolution of Si process technologies. However, the near future will bring a continual stream of innovations in transistor architecture and gate dielectric and interconnect materials. Maintaining historical high levels of reliability in this environment will be challenging. In this paper we discuss the reliability issues that have the potential to limit the future pace of technology progress.
Keywords :
dielectric materials; semiconductor device models; semiconductor device reliability; silicon; transistors; Moore´s law; gate dielectric materials; interconnect materials; reliability; transistor architecture; Dielectrics; Integrated circuit reliability; Logic gates; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047092
