• DocumentCode
    3565167
  • Title

    Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

  • Author

    Xiuyan Li ; Yajima, Takeaki ; Nishimura, Tomonori ; Nagashio, Kosuke ; Toriumi, Akira

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • Abstract
    The scavenging kinetics of ultra-thin-SiO2 interface layer (IL) in HfO2/SiO2/Si stacks is investigated by focusing on SiO2/Si interface reaction in addition to both O and Si atom kinetics. SiO2/Si interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO2 with the help of Si substrate. Based on both diffusion kinetics and possible reaction, an analytical model for two-stage SiO2-IL scavenging in high-k gate stack is proposed.
  • Keywords
    hafnium compounds; high-k dielectric thin films; reaction kinetics; silicon compounds; surface diffusion; vacancies (crystal); HfO2-SiO2-Si stacks; HfO2-SiO2-Si; SiO2-Si interface reaction; diffusion kinetics; high-k gate stack; oxygen vacancy; scavenging kinetics; two-stage SiO2-IL scavenging; ultra-thin-SiO2 interface layer; Hafnium oxide; Kinetic theory; Mathematical model; Silicon; Silicon carbide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047094
  • Filename
    7047094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565167