• DocumentCode
    3565168
  • Title

    First principles study of SiC/SiO2 interfaces towards future power devices

  • Author

    Shiraishi, K. ; Chokawa, K. ; Shirakawa, H. ; Endo, K. ; Araidai, M. ; Kamiya, K. ; Watanabe, H.

  • Author_Institution
    Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2014
  • Abstract
    We clarify the intrinsic problems of SiC/SiO2 interfaces by the first principles calculations. The unique nearly free electron like characteristics of SiC conduction band bottom causes unexpected formation of interface states near the conduction band bottoms by process induced strain. These results indicate that strain free process is necessary for fabricating high quality NMOSFET. Another proposal is developing PMOSFET instead of presently popular NMOSFET. Moreover, we also discuss the Vth instability caused by proton diffusion.
  • Keywords
    MOSFET; ab initio calculations; conduction bands; interface states; silicon compounds; wide band gap semiconductors; NMOSFET; PMOSFET; SiC conduction band; SiC-SiO2; Vth instability; first principles study; free electron like characteristics; future power devices; interface states; intrinsic problems; proton diffusion; strain free process; Interface states; MOSFET circuits; Photonic band gap; Shape; Silicon; Silicon carbide; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047095
  • Filename
    7047095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565168