Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters

Author

Petti, L. ; Bottacchi, F. ; Munzenrieder, N. ; Faber, H. ; Cantarella, G. ; Vogt, C. ; Buthe, L. ; Namal, I. ; Spath, F. ; Hertel, T. ; Anthopoulos, T.D. ; Troster, G.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zürich, Switzerland

fYear

2014

Abstract

We report the integration of solution-processed high-purity semiconducting (7,5) single walled carbon nanotubes (SWCNTs) with metal oxides for the fabrication of high-performance CMOS inverters on free-standing plastic foils. Flexible inverters based on spin-coated SWCNTs and sputtered amorphous InGaZnO (IGZO) exhibit gains up to 85 V/V, even while bent to a tensile radius of 1 cm. To our knowledge, this is the highest gain ever reported for flexible and strained hybrid inverters, supplied at V_DD≤10 V. We also realize flexible inverters based on fully solution-deposited SWCNTs and InO_x semiconductors.

Keywords

CMOS integrated circuits; amorphous semiconductors; gallium compounds; indium compounds; invertors; single-wall carbon nanotubes; spin coating; spray coatings; sputtered coatings; zinc compounds; InGaZnO; flexible and strained hybrid inverters; flexible complementary inverters; free-standing plastic foils; fully solution-deposited SWCNTs; high-performance CMOS inverter fabrication; single walled carbon nanotubes; solution-processed high-purity semiconducting integration; spin-coated SWCNTs; sputtered amorphous spray-coated metal oxides; tensile radius; Gain measurement; Inverters; Metals; Semiconductor device measurement; Silicon; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047113

Filename

7047113