Title :
High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure
Author :
Mu-Shih Yeh ; Yung-Chun Wu ; Min-Hsin Wu ; Yi-Ruei Jhan ; Ming-Hsien Chung ; Min-Feng Hung
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high ION/IOFF (>107). The ION current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.
Keywords :
elemental semiconductors; etching; silicon; thin film transistors; Si; high performance ultrathin body; poly-Si junctionless thin film transistors; quantum confined effect; simple dry etching process; size 2.4 nm; trench JL-TFT; trench structure; Fabrication; Logic gates; Scanning electron microscopy; Silicon; Substrates; Temperature dependence; Temperature sensors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047115
