Author :
Sekar, D.C. ; Bateman, B. ; Raghuram, U. ; Bowyer, S. ; Bai, Y. ; Calarrudo, M. ; Swab, P. ; Wu, J. ; Nguyen, S. ; Mishra, N. ; Meyer, R. ; Kellam, M. ; Haukness, B. ; Chevallier, C. ; Wu, H. ; Qian, H. ; Kreupl, F. ; Bronner, G.
Abstract :
Low-power, reproducible operation of Resistive RAM (RRAM) requires control of capacitive surge currents during write. We propose a fab-friendly TiN/conductive TaOx/HfO2/TiN RRAM with a built-in surge current reduction layer. It reduces worst case write current by 33% and fail bit count by 23× compared to conventional RRAM. A novel circuit to control surge current is demonstrated that improves write current by 40% and endurance by 63%. Switching, endurance and retention data for a 256kb chip with these concepts is presented.
Keywords :
electric current control; hafnium compounds; low-power electronics; resistive RAM; surges; tantalum compounds; titanium compounds; RRAM; TiN-TaOx-HfO2-TiN; capacitive surge currents control; circuit optimization; resistive RAM; surge current reduction layer; Hafnium compounds; Programming; Resistance; Surges; Switches; Tin;
