Title :
Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses
Author :
Garbin, D. ; Bichler, O. ; Vianello, E. ; Rafhay, Q. ; Gamrat, C. ; Perniola, L. ; Ghibaudo, G. ; DeSalvo, B.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
Software implementations of artificial Convolutional Neural Networks (CNNs), taking inspiration from biology, are at the state-of-the-art for Pattern Recognition (PR) applications and they are successfully used in commercial products [1]. However, they require power-hungry CPU/GPU to perform convolution operations based on computationally expensive sums of multiplications. This hinders their integration in portable devices. Some full CMOS-based hardware implementations of CNN have been suggested, but they still require the computation of multiplications [2]. In this work, we present for the first time to our knowledge a spike-based hardware implementation of CNN using HfO2 based OxRAM devices as binary synapses. OxRAM devices are chosen for their low switching energy [3] and promising endurance performance [4]. We perform an experimental and theoretical study of the impact of programming conditions at both device and system levels. A complex visual pattern recognition application is demonstrated with a spike-based hierarchical CNN, inspired from the mammalian visual cortex organization. A high accuracy (pattern recognition rate >94%) is obtained for all the tested programming conditions, even if the variability associated to weaker programming conditions is larger.
Keywords :
hafnium compounds; neural nets; pattern recognition; random-access storage; HfO2; OxRAM device; OxRAM synapses; binary synapses; low switching energy; mammalian visual cortex organization; spike-based hardware implementation; spike-based hierarchical CNN; variability-tolerant convolutional neural network; visual pattern recognition; Artificial neural networks; Integrated circuit modeling; Kernel; Neurons; Performance evaluation; Programming;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047126