Performance evaluation of MoS2-WTe2 vertical tunneling transistor using real-space quantum simulator

Author

Kai-Tak Lam ; Gyungseon Seol ; Jing Guo

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

fYear

2014

Abstract

Layered two dimensional (2D) semiconductor materials enable vertical interlayer heterojunctions (HJ) without the requirement of lattice matching. Interlayer transport through a MoS₂-WTe₂ vertical HJ transistor is studied by atomistic quantum device simulations. Ultra-steep subthreshold slope (SS) is obtained due to the utilization of band filtering as the switching mechanism. The simulator enables the investigation of the effects of atomic defects and trapped charges on the performance of the atomically thin HT transistor. It is shown that the ultra-steep SS in TMD vertical tunneling FETs is robust against both atomic defects in the TMD layers and charged impurity scattering.

Keywords

field effect transistors; molybdenum compounds; performance evaluation; tungsten compounds; tunnelling; 2D semiconductor material; HJ; Interlayer transport; MoS₂-WTe₂; SS; TMD vertical tunneling FET; atomic defect; atomistic quantum device simulation; band filtering utilization; lattice matching; layered two dimensional semiconductor material; performance evaluation; switching mechanism; trapped charged impurity scattering; ultrasteep subthreshold slope; vertical interlayer heterojunction; Atomic layer deposition; Couplings; Lattices; Logic gates; Performance evaluation; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047141

Filename

7047141