Dramatic effects of hydrogen-induced out-diffusion of oxygen from Ge surface on junction leakage as well as electron mobility in n-channel Ge MOSFETs

This paper discusses about effects of oxygen in Ge substrate on MOSFET performance from both viewpoints of advantages and disadvantages. For improvement of electron mobility in Ge n-MOSFETs, oxygen in the channel region should be extracted to suppress additional scattering. On the other hand, oxygen in S/D region is helpful for dramatically reducing junction leakage currents. By understanding these oxygen effects on Ge, high electron mobility Ge n-MOSFETs with the highest I_on/I_off ratio are demonstrated.