DocumentCode
3565264
Title
Evolution of directed ion beams from doping to materials engineering
Author
Renau, Anthony
Author_Institution
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
fYear
2014
Abstract
We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discuss some specific 3D challenges and introduce a new process technology for 3D that uses directed ion beams for material modification including implant, etch and deposition.
Keywords
MOSFET; etching; ion beams; ion implantation; semiconductor doping; contact resistance reduction; cryogenic implant; deposition; directed ion beam evolution; doping; etching; finFET; implanter processing; leakage resistance reduction; material modification engineering; temperature implant reduction; Cryogenics; Doping; Implants; Ion beams; Materials; Plasma temperature; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047157
Filename
7047157
Link To Document