High-performance carbon nanotube field-effect transistors

We demonstrate carbon nanotube (CNT) field-effect transistors (CNFETs) with the highest current drive (per unit layout width)¹ to-date (>100 μA/μm at 400 nm channel length and 1V V_DS), while simultaneously achieving high I_ON/I_OFF (>5,000). This is the first demonstration of CNFETs with CNT density above 100 CNTs/μm consisting of highly-aligned CNTs and achieving both high current drive and high I_ON/I_OFF. The current drives of the demonstrated CNFETs approach that of similarly-scaled and similarly-biased silicon-based field-effect transistors in production in major semiconductor foundries.