Title :
NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction
Author :
Ma, J. ; Zhang, W. ; Zhang, J.F. ; Benbakhti, B. ; Ji, Z. ; Mitard, J. ; Franco, J. ; Kaczer, B. ; Groeseneken, G.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
Abstract :
Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.
Keywords :
MOSFET; elemental semiconductors; germanium; negative bias temperature instability; semiconductor device reliability; Ge devices; Ge-GeO2; NBTI kinetics; Si devices; device optimization; lifetime prediction method; pMOSFET; power law; Aluminum oxide; Energy states; Kinetic theory; MOSFET; Reliability; Silicon; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047166
