DocumentCode
3565313
Title
Experiment and model for deviation from Pelgrom scaling relation in device width
Author
Ning Lu ; Brown, Jeffrey S. ; Thoma, Rainer ; Kotecha, Pooja M. ; Wachnik, Richard A.
Author_Institution
IBM Semicond. R&D Center, Essex Junction, VT, USA
fYear
2014
Abstract
Through modeling, simulations, and experimental data, we show that FETs exhibit several width dependent characteristics purely due to un-correlated random variations among sub-threshold currents in different width segments. They include unit-width median sub-threshold current and constant-current threshold voltage. The width scaling relation for threshold voltage mismatch is different from Pelgrom scaling relation for sufficiently large variation when compared to the thermal voltage.
Keywords
field effect transistors; random processes; semiconductor device models; FET; Pelgrom scaling relation; constant-current threshold voltage; thermal voltage; threshold voltage mismatch; uncorrelated random variation; unit-width median subthreshold current; width scaling relation; Data models; FinFETs; Leakage currents; Monte Carlo methods; Standards; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047174
Filename
7047174
Link To Document