• DocumentCode
    3565313
  • Title

    Experiment and model for deviation from Pelgrom scaling relation in device width

  • Author

    Ning Lu ; Brown, Jeffrey S. ; Thoma, Rainer ; Kotecha, Pooja M. ; Wachnik, Richard A.

  • Author_Institution
    IBM Semicond. R&D Center, Essex Junction, VT, USA
  • fYear
    2014
  • Abstract
    Through modeling, simulations, and experimental data, we show that FETs exhibit several width dependent characteristics purely due to un-correlated random variations among sub-threshold currents in different width segments. They include unit-width median sub-threshold current and constant-current threshold voltage. The width scaling relation for threshold voltage mismatch is different from Pelgrom scaling relation for sufficiently large variation when compared to the thermal voltage.
  • Keywords
    field effect transistors; random processes; semiconductor device models; FET; Pelgrom scaling relation; constant-current threshold voltage; thermal voltage; threshold voltage mismatch; uncorrelated random variation; unit-width median subthreshold current; width scaling relation; Data models; FinFETs; Leakage currents; Monte Carlo methods; Standards; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047174
  • Filename
    7047174