DocumentCode
3565316
Title
Physics-based factorization of Magnetic Tunnel Junctions for modeling and circuit simulation
Author
Camsari, Kerem Yunus ; Ganguly, Samiran ; Datta, Deepanjan ; Datta, Supriyo
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2014
Abstract
We present a physics-based factorization of Magnetic Tunnel Junctions (MTJ) in terms of a minimal number of experimentally and theoretically accessible parameters that can be used to optimize existing MTJ designs as well as to probe emerging MTJ devices. Our model fully captures angular/voltage dependence of state-of-the-art MTJs and Spin Valves (SV) and is compatible with existing circuit simulation frameworks such as Verilog-A and SPICE.
Keywords
magnetic tunnelling; optimisation; semiconductor device models; SPICE; Verilog-A; angular dependence; magnetic tunnel junctions; physics-based factorization; spin valves; voltage dependence; Frequency modulation; Integrated circuit modeling; Junctions; Magnetic tunneling; Spin valves; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047177
Filename
7047177
Link To Document