• DocumentCode
    3565815
  • Title

    5 Minutes TSV copper electrodeposition

  • Author

    Kondo, Kazuo ; Funahashi, Chikara ; Hayashi, Taro ; Yokoi, Masayuki ; Okamoto, Naoki ; Saito, Takeyasu

  • Author_Institution
    Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
  • fYear
    2014
  • Firstpage
    306
  • Lastpage
    308
  • Abstract
    TSV(Through Silicon Via) is promising interconnection for the next generation smartphone, driving assistance and medical care system because of its ability of high speed image processing and low energy consumption. Conventional TSV electrodeposition requires several 10 minutes to hour because of applying small current of less than 10 mA/cm2. We are able to electrodeposit the 6 μm diameter and depth of 25 μm TSV via within 5 minutes. A very high on current of 90 mA/cm2 is able to apply without void formation.
  • Keywords
    copper; electrodeposition; integrated circuit interconnections; integrated circuit packaging; three-dimensional integrated circuits; Cu; TSV copper electrodeposition; driving assistance; high speed image processing; low energy consumption; medical care system; size 25 mum; size 6 mum; smartphone; through silicon via; time 10 min; time 5 min; Copper; Image processing; Medical services; Next generation networking; Silicon; System-on-chip; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014 9th International
  • Type

    conf

  • DOI
    10.1109/IMPACT.2014.7048383
  • Filename
    7048383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565815