Floating-gate low-voltage/low-power linear threshold element for neural computation

Author

Aunet, Snorre ; Berg, Yngvar ; Saether, T.

Author_Institution

Dept. of Phys. Electron., NTNU, Trondheim, Norway

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

We present analysis, simulation and measurements, for a new reconfigurable 2-MOSFET linear threshold element and show how it can be used to implement INVERT, NAND3, NAND2, NOR3, NOR2 and CARRY. The threshold, and thereby the Boolean function, might be changed in real time by changing the voltage on one or more of the inputs. Simulation suggests that it can function as a generator of CARRY for binary addition with a power supply voltage down to about 200 mV

Keywords

Boolean functions; CMOS integrated circuits; MOSFET; circuit simulation; digital arithmetic; integrated circuit measurement; integrated circuit modelling; logic gates; low-power electronics; neural chips; reconfigurable architectures; 200 mV; Boolean function; CARRY function; INVERT function; NAND2 function; NAND3 function; NOR2 function; NOR3 function; binary addition; circuit measurements; floating-gate low-voltage/low-power linear threshold element; input voltage; neural computation; power supply voltage; reconfigurable two-MOSFET linear threshold element; simulation; threshold voltage; Artificial neural networks; Biological neural networks; Brain modeling; Circuits; Computational modeling; Informatics; MOS devices; MOSFETs; Power supplies; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1011041

Filename

1011041