Title :
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Author :
Feick, H. ; Fretwurst, E. ; Moll, M. ; Lindstr?¶m, G.
Author_Institution :
I. Inst. fur Experimentalphys., Hamburg Univ., Germany
Abstract :
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors
Keywords :
annealing; deep level transient spectroscopy; defect states; leakage currents; neutron effects; silicon radiation detectors; thermally stimulated currents; Si; TSC method; annealing; deep level spectroscopy; defect levels; depletion voltage; high resistivity Si detectors; isochronous annealing; leakage current; neutron irradiation; radiation damage; Annealing; Conductivity; Detectors; Leak detection; Leakage current; Monitoring; Neutrons; Silicon; Temperature; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.590944
