DocumentCode
3565950
Title
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Author
Feick, H. ; Fretwurst, E. ; Moll, M. ; Lindstr?¶m, G.
Author_Institution
I. Inst. fur Experimentalphys., Hamburg Univ., Germany
Volume
1
fYear
1996
Firstpage
214
Abstract
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors
Keywords
annealing; deep level transient spectroscopy; defect states; leakage currents; neutron effects; silicon radiation detectors; thermally stimulated currents; Si; TSC method; annealing; deep level spectroscopy; defect levels; depletion voltage; high resistivity Si detectors; isochronous annealing; leakage current; neutron irradiation; radiation damage; Annealing; Conductivity; Detectors; Leak detection; Leakage current; Monitoring; Neutrons; Silicon; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-3534-1
Type
conf
DOI
10.1109/NSSMIC.1996.590944
Filename
590944
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