Title :
13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT
Author :
Okamoto, Masayuki ; Tanaka, Toshihiko ; Matuzaki, Koyo ; Hashizume, Tamotsu ; Yamada, Hiroaki
Author_Institution :
Grad. Sch. of Sci. Ube, Nat. Coll. of Technol., Yamaguchi, Japan
Abstract :
Gallium nitride high-electron mobility transistors (GaN HEMTs) have attractive properties, low on-resistances and fast switching speeds. This paper presents the characteristics of a normally-on GaN HEMT that we fabricated. Further, the circuit operation of a Class-E amplifier is analyzed. Experimental results demonstrate the excellent performance of the gate drive circuit for the normally-on GaN HEMT and the 13.56MHz radio frequency (RF) power amplifier.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; high electron mobility transistors; radiofrequency power amplifiers; GaN; RF power amplifier; class-E amplifier; frequency 13.56 MHz; gallium nitride high-electron mobility transistors; gate drive circuit; normally-on GaN HEMT; radio frequency power amplifier; Capacitors; Educational institutions; Gallium nitride; HEMTs; Inductors; Logic gates; Power amplifiers; 13.56-MHz RF amplifier; GaN HEMT; class-E amplifie; normally-on device;
Conference_Titel :
Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE
DOI :
10.1109/IECON.2014.7048621
