Development of a modeling platform for 4.5 kV IGBT power modules

Author

Sfakianakis, Georgios E. ; Nawaz, Muhammad

Author_Institution

Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2014

Firstpage

1416

Lastpage

1422

Abstract

This paper deals with the development of a PSpice based evaluation platform for high power IGBT devices. The purpose of this platform is to provide useful information for the design and the assessment of converter cells for potential high power applications. An extended version of Hefner model is presented for high power, high voltage IGBTs taking into account temperature variation. A parametric analysis is presented in order to depict the effect of each parameter in the model. A set of parameters have been extracted and then verified with static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based IGBT power module (StakPak). Finally, an overall energy loss estimation is presented as function of temperature, load current and collector-emitter voltage.

Keywords

insulated gate bipolar transistors; modules; power convertors; semiconductor device models; silicon; Hefner model; IGBT power module; PSpice; Si; StakPak; collector-emitter voltage; converter cell; current 2 kA; energy loss estimation; high power application; load current; modeling platform; parametric analysis; voltage 4.5 kV; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Multichip modules; Device Modeling; IGBTs; Power Semiconductor Modules; Semiconductor Devices; Spice Modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE

Type

conf

DOI

10.1109/IECON.2014.7048687

Filename

7048687