DocumentCode :
3566251
Title :
Reduction of thermal cycling to increase the lifetime of MOSFET motor drives
Author :
Baars, N.H. ; Wijnands, C.G.E. ; Duarte, J.L.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear :
2014
Firstpage :
1740
Lastpage :
1746
Abstract :
The variation of the temperature in semiconductors, caused by the load profile, results in the long term in material fatigue. A distinction can be made between the average temperature and the temperature swing, where the temperature swing has a significant effect on the lifetime of a semiconductor. Therefore, the auxiliary-pole topology is proposed to reduce the temperature swing of the MOSFETs in a motor drive. The auxiliary-pole topology divides the load current over two switching-legs and circulates a current when there is a low or zero load current. The conventional half bridge topology is used as a benchmark. Both topologies are simulated with the same load profile and with an equal total amount of silicon. The results show a reduction of the temperature swing and an increase in average temperature of the switches in the auxiliary-pole topology. This leads to an significant improvement in cycles to failure and time to failure.
Keywords :
field effect transistor switches; motor drives; power semiconductor switches; MOSFET motor drive lifetime; auxiliary-pole topology; switching-legs; temperature swing reduction; temperature variation; thermal cycling reduction; zero load current; Heating; Junctions; MOSFET; Power electronics; Semiconductor device modeling; Switches; Topology; Lifetime estimation; Motor drives; Power semiconductor switches; Thermal management; Thermal management of electronics; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE
Type :
conf
DOI :
10.1109/IECON.2014.7048737
Filename :
7048737
Link To Document :
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