Sensitivity analysis of transformerless PV inverter topologies to physical variations of power devices

Author

Pigazo, Alberto ; Jedtberg, Holger ; Liserre, Marco

Author_Institution

Dept. of Comput. Syst. Eng. & Electron., Univ. of Cantabria, Santander, Spain

fYear

2014

Firstpage

2239

Lastpage

2245

Abstract

Transformerless (TL) topologies are employed in 1φ PV inverter topologies due to their small size and low weight. Avoiding the grid side transformer requires the modulation technique and the basis topology to be accordingly changed in order to mitigate dc current components in the grid side and the leakage current to ground. This paper carries out a sensitivity analysis of selected TL topologies. This analysis investigates the impact of parameter variations of the employed semiconductor devices and detects the device which affects the most the overall efficiency. As a result, relevant info for engineers selecting the most suitable power devices for the implementation of a certain TL topology is provided.

Keywords

invertors; leakage currents; photovoltaic power systems; power transformers; sensitivity analysis; dc current components; grid side transformer; leakage current; modulation technique; power devices; semiconductor devices; sensitivity analysis; transformerless PV inverter topologies; Insulated gate bipolar transistors; Inverters; Leakage currents; Sensitivity analysis; Switches; Switching frequency; Topology; Transformerless PV inverters; sensitivity analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE

Type

conf

DOI

10.1109/IECON.2014.7048813

Filename

7048813