• DocumentCode
    3566512
  • Title

    Microwave planar active filters in GaAs and SiGe technologies

  • Author

    Bazzi, H. ; Biron, F. ; Bosse, S. ; Delage, L. ; Barelaud, B. ; Billonnet, L. ; Jarry, B.

  • Author_Institution
    Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France
  • Volume
    1
  • fYear
    2002
  • Firstpage
    421
  • Abstract
    This paper deals with the design of integrated planar active filters on Si and GaAs substrates. Implementation techniques are detailed in both technologies for active LC filters. A comparison between the two technologies is made with the design of integrated negative resistance circuits.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; active filters; gallium arsenide; integrated circuit design; microwave filters; microwave integrated circuits; negative resistance circuits; BiCMOS HBT technology; GaAs; GaAs technology; InAlAs-InGaAs; InAlAs/InGaAs HBT technology; SiGe; SiGe technology; active LC filters; active inductance LC filter; integrated negative resistance circuits; integrated planar active filters; microwave planar active filters; Active filters; CMOS technology; Capacitors; Frequency; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Microwave technology; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2002 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-7239-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.2002.1011645
  • Filename
    1011645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3566512