Title :
Implementation of RF power MOS in 0.18/spl mu/m CMOS technology for single chip solution
Author :
Heng-Ming Hsu ; Chih-Wei Chen ; Jiong-Guang Su ; Ta-Hsun Yeh ; Lin, J.C.-H. ; Sun, J.Y.-C. ; Chun Hsiung Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18/spl mu/m CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification testing is also included.
Keywords :
CMOS integrated circuits; electric breakdown; integrated circuit testing; power integrated circuits; 0.18 micron; CMOS technology; RF characteristics; breakdown voltage; qualification testing; silicon integrated RF power MOS; single chip; Breakdown voltage; CMOS technology; Computer hacking; Contact resistance; Electric resistance; Impact ionization; Mass production; Qualifications; Radio frequency; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011808
