DCS 1800 base station receiver integrated in 0.25 /spl mu/m CMOS

Author

Boric-Lubecke, O. ; Lin, J. ; Gould, P.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

Volume

2

fYear

2002

Firstpage

1049

Abstract

This paper describes the first CMOS chip implementation of a GSM base station receiver. This chip consists of two LNA´s, switch, mixer, LO buffer amplifier/balun, and RF balun. A CMOS IF amplifier is packaged separately. The 0.25 /spl mu/m CMOS receiver, biased at 3 V, meets DCS1800 specifications and achieves better linearity and noise figure than previously published BiCMOS receivers. Output IP3 (OIP3) of over 25 dBm was obtained for the complete receiver chain, with a noise figure of 3 dB, and gain of 25 dB. This is believed to be the highest OIP3 and lowest NF reported to date for a CMOS receiver that meets GSM base station specifications.

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; baluns; buffer circuits; cellular radio; integrated circuit noise; telephone sets; 0.25 micron; 25 dB; 3 V; 3 dB; CMOS IF amplifier; CMOS chip; DCS 1800 base station receiver; GSM base station receiver; LNA; LO buffer amplifier/balun; RF balun; digital cellular system; mixer; output IP3; receiver chain; switch; Base stations; Distributed control; GSM; Impedance matching; Linearity; Noise figure; Packaging; Radio frequency; Radiofrequency amplifiers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011817

Filename

1011817