Design of a compact, ultra high efficient isolated DC-DC converter utilizing GaN devices

Author

Ramachandran, Rakesh ; Nymand, Morten ; Petersen, Niels H.

Author_Institution

Maersk Mc-Kinney Moller Inst., Univ. of Southern Denmark, Odense, Denmark

fYear

2014

Firstpage

4256

Lastpage

4261

Abstract

Wide band gap semiconductor devices have a promising future in various power converter applications due to their higher performance characteristics such as high frequency, high voltage and high operating temperature. For power switching applications, wide band gap materials mainly Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are attractive. In this paper, the detailed design analysis for an ultra-high efficient (about 99%), 1.7 kW, 50 kHz, 130V to 48V isolated dc-dc converter along with the prototype model is presented and discussed. The converter is designed with a synchronous rectifier stage for efficiency improvement. Furthermore, it discusses the usage of gallium nitride switches in power converter application to improve the overall converter efficiency.

Keywords

DC-DC power convertors; III-V semiconductors; gallium compounds; power semiconductor switches; silicon compounds; switching convertors; wide band gap semiconductors; GaN; SiC; diamond; frequency 50 kHz; gallium nitride switches; isolated dc-dc converter; power 1.7 kW; power converter applications; power switching applications; silicon carbide; synchronous rectifier stage; voltage 130 V to 48 V; wide band gap materials; wide band gap semiconductor devices; Copper; Gallium nitride; Inductance; Inductors; Resistance; Silicon; Windings; Gallium Nitride; Silicon Carbide; dc-dc power converters; high efficiency; transformer; wide band gap devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE

Type

conf

DOI

10.1109/IECON.2014.7049142

Filename

7049142