Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs

SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E´ centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.