Title :
Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs
Author :
Anders, M.A. ; Lenahan, P.M. ; Follman, J. ; Arthur, S.D. ; McMahon, J. ; Yu, L. ; Zhu, X. ; Lelis, A.J.
Author_Institution :
Eng. Sci. & Mech., Pennsylvania State Univ., University Park, MD, USA
Abstract :
SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E´ centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.
Keywords :
MOSFET; magnetic resonance; negative bias temperature instability; semiconductor device reliability; silicon compounds; wide band gap semiconductors; EDMR; MOSFET; NBTI phenomena; SiC; electrically detected magnetic resonance; negative bias temperature instability; Hydrogen; MOSFET; Magnetic resonance; Silicon; Silicon carbide; Temperature dependence; Temperature measurement; NBTI; SiC; defects; magnetic resonance;
Conference_Titel :
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN :
978-1-4799-7308-8
DOI :
10.1109/IIRW.2014.7049497
