• DocumentCode
    3567734
  • Title

    Impact factors for BTI lifetime predictions

  • Author

    Schlunder, Christian ; Reisinger, Hans ; Martin, Andreas ; Gustin, Wolfgang

  • Author_Institution
    Reliability Dept., Infineon Technol. AG Corp., Neubiberg, Germany
  • fYear
    2014
  • Firstpage
    21
  • Lastpage
    27
  • Abstract
    For accurate Bias Temperature (BTI) lifetime assessments a lot of aspects have to be considered correctly. Detailed requirement profiles, proper designed test-structures, accurate measurement techniques, correct consideration of recovery, and a deep understanding of circuit functions are the most important impact factors for a safe and accurate reliability assurance. This review-paper will address these issues for BTI lifetime predictions. It will discuss both, hazards like adulterant influences of measurement delay or parasitic Plasma Induced Damage (PID) of test-structures as well as opportunities like the s-curve behavior of AC-stress. Finally, some simple guidelines are set up.
  • Keywords
    MOSFET; life testing; semiconductor device reliability; semiconductor device testing; AC-stress test; BTI lifetime predictions; S-curve behavior; bias temperature lifetime assessment; circuit functions; measurement delay; parasitic plasma induced damage; reliability assurance; Degradation; Delays; Extrapolation; Semiconductor device measurement; Stress; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
  • Print_ISBN
    978-1-4799-7308-8
  • Type

    conf

  • DOI
    10.1109/IIRW.2014.7049499
  • Filename
    7049499