GaN HEMTs for millimeter-wavelength power amplifiers

As GaN-based amplifier technology is garnering interest due to its inclusion into major proposed DoD systems, we look to extend the operating frequency and scale the output power of the technology to the millimeter-wavelength (MMW) regime (30–300 GHz). Enabling power performance in this frequency range not only entails geometric device scaling, but also requires novel heterostructure and device design to facilitate simultaneous high frequency response and high operating voltage. In this regard, it cannot be assumed that the reliability of previous frequency nodes will extend into the MMW regime. In this talk, an overview of the challenges and tradeoffs of scaling GaN-based devices will be presented as well as a look into NRL´s approach to MMW GaN HEMT design including initial reliability data at 40 GHz.