Defects in MoS2 and other TMDs: Impact on device performance and variability

Understandingandcontrollingpointdefectsandimpimtiesisvitalfortherealizationofnanoelectronic devices based on transition metal dichalcogenides. We find that intrinsic defects in MoS2 dominate the metal/MoS2 contact resistance and provide a low Schottky barrier in dependent of metal contact work function. Furthermore, we showthatMoS2 can exhibit both n-type and p-type conduction at different points on a same sample. We identify these regions independently by complementary characterization techniques and show how the Fermi level can shift by 1 eV over tens of nanometers in spatial resolution. We find that these variations in doping are defect chemistry related. We will discuss how to passivate these defects and show our promising recent results of epitaxially grown TMDs for large area device applications.