Physical modeling of hot-carrier degradation in nLDMOS transistors

Author

Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.-M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T.

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron. at the Inst. for Microelectron., Vienna Univ. of Technol., Vienna, Austria

fYear

2014

Firstpage

58

Lastpage

62

Abstract

Our physics-based HCD model has been validated using scaled CMOS transistors in our previous work. In this work we apply this model for the first time to a high-voltage nLDMOS device. For the calculation of the degrading behaviour the Boltzmann transport equation solver ViennaSHE is used which also requires high quality adaptive meshing. We discuss the influence of the different model components in the different device regions. Finally we compare the model to experimental degradation results and show that each one gives a significant contribution to the result and that all of them are needed in order to satisfactorily fit the experimental data.

Keywords

Boltzmann equation; MOSFET; hot carriers; semiconductor device models; Boltzmann transport equation solver; CMOS transistors; ViennaSHE; adaptive meshing; hot-carrier degradation; nLDMOS device; nLDMOS transistors; physical modeling; physics-based HCD model; Degradation; Hot carriers; Integrated circuit modeling; Mathematical model; Reliability; Stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International

Print_ISBN

978-1-4799-7308-8

Type

conf

DOI

10.1109/IIRW.2014.7049511

Filename

7049511