Title :
Physical modeling of hot-carrier degradation in nLDMOS transistors
Author :
Wimmer, Y. ; Tyaginov, S. ; Rudolf, F. ; Rupp, K. ; Bina, M. ; Enichlmair, H. ; Park, J.-M. ; Minixhofer, R. ; Ceric, H. ; Grasser, T.
Author_Institution :
Christian Doppler Lab. for Reliability Issues in Microelectron. at the Inst. for Microelectron., Vienna Univ. of Technol., Vienna, Austria
Abstract :
Our physics-based HCD model has been validated using scaled CMOS transistors in our previous work. In this work we apply this model for the first time to a high-voltage nLDMOS device. For the calculation of the degrading behaviour the Boltzmann transport equation solver ViennaSHE is used which also requires high quality adaptive meshing. We discuss the influence of the different model components in the different device regions. Finally we compare the model to experimental degradation results and show that each one gives a significant contribution to the result and that all of them are needed in order to satisfactorily fit the experimental data.
Keywords :
Boltzmann equation; MOSFET; hot carriers; semiconductor device models; Boltzmann transport equation solver; CMOS transistors; ViennaSHE; adaptive meshing; hot-carrier degradation; nLDMOS device; nLDMOS transistors; physical modeling; physics-based HCD model; Degradation; Hot carriers; Integrated circuit modeling; Mathematical model; Reliability; Stress; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN :
978-1-4799-7308-8
DOI :
10.1109/IIRW.2014.7049511
