• DocumentCode
    3567767
  • Title

    TDDB characteristics of thin polycrystalline and amorphous HfO2 films

  • Author

    Tomura, Yusuke ; Hasunuma, Ryu ; Yamabe, Kikuo ; Migita, Shinji

  • Author_Institution
    Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
  • fYear
    2014
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    We investigated time-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) characteristics of thin polycrystalline and amorphous HfO2 films. It was confirmed that the leakage current through polycrystalline HfO2 films was larger than that of amorphous films. However, the TDDB lifetime of polycrystalline films was longer than that of amorphous films. It was also found that polycrystalline HfO2 films are more uniform than amorphous in terms of the lifetime distribution.
  • Keywords
    amorphous semiconductors; electric breakdown; hafnium compounds; semiconductor thin films; HfO2; amorphous films; leakage current; thin polycrystalline films; time-dependent dielectric breakdown; time-zero dielectric breakdown; Capacitors; Films; Grain boundaries; Hafnium compounds; Leakage currents; Reliability; Stress; TDDB; high-k; polycrystalline HfO2;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
  • Print_ISBN
    978-1-4799-7308-8
  • Type

    conf

  • DOI
    10.1109/IIRW.2014.7049533
  • Filename
    7049533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3567767