Title :
TDDB characteristics of thin polycrystalline and amorphous HfO2 films
Author :
Tomura, Yusuke ; Hasunuma, Ryu ; Yamabe, Kikuo ; Migita, Shinji
Author_Institution :
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
We investigated time-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) characteristics of thin polycrystalline and amorphous HfO2 films. It was confirmed that the leakage current through polycrystalline HfO2 films was larger than that of amorphous films. However, the TDDB lifetime of polycrystalline films was longer than that of amorphous films. It was also found that polycrystalline HfO2 films are more uniform than amorphous in terms of the lifetime distribution.
Keywords :
amorphous semiconductors; electric breakdown; hafnium compounds; semiconductor thin films; HfO2; amorphous films; leakage current; thin polycrystalline films; time-dependent dielectric breakdown; time-zero dielectric breakdown; Capacitors; Films; Grain boundaries; Hafnium compounds; Leakage currents; Reliability; Stress; TDDB; high-k; polycrystalline HfO2;
Conference_Titel :
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN :
978-1-4799-7308-8
DOI :
10.1109/IIRW.2014.7049533
