III-V nanowire MOSFETs

III-V MOSFETs are currently attracting considerable attention due the advantageous transport properties of the III-V materials. The recent development includes realization of transistors with transconductance values that are comparable or higher than state-of-the-art III-V HEMTs. Low on-resistance has further been achieved by the use of epitaxial regrowth technologies. However, to maintain electrostatic integrity as the gate length is scaled, the transistor evolution suggests the introduction of non-planar geometries, following the development of the Si technology. In this talk, we will review the current status of the III-V MOSFET evolution with a special emphasis on the III-V nanowire MOSFETs fabricated in lateral or vertical geometry.