Abstract :
Operating principles and physical mechanisms, variability and reliability of resistive random access memory (RRAM), limiting factors and future trends in RRAM technology were discussed in the group. Flash memory, the primary type of nonvolatile memory in use today, has a number of problems with die scaling and with an increase of the memory capacity. RRAM is a disruptive technology solution, which promises implementation of extremely dense bit-arrays. It is also promising for the development of 3d memory arrays. Comparing to another high density memory technology, such as 3d NAND, all layers of a 3d RRAM chip may form independent arrays, simplifying chip design and fabrication process flow.
