Title :
Radiation-hardened techniques for CMOS flash ADC
Author :
Gatti, Umberto ; Calligaro, Cristiano ; Pikhay, Evgeny ; Roizin, Yakov
Author_Institution :
RedCatDevices Milan, Milan, Italy
Abstract :
This work presents a rad-hard 4-bit 10MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300krad.
Keywords :
CMOS integrated circuits; analogue-digital conversion; integrated circuit layout; radiation hardening (electronics); CMOS flash ADC; CMOS technology; architecture levels; circuit damage; custom methodology; frequency 100 MHz; harsh environments; layout levels; rad-hardened techniques; radiation hardened techniques; size 0.18 mum; space applications; total dose immunity; towerjazz; word length 4 bit; CMOS integrated circuits; CMOS technology; Decoding; Inverters; Layout; Radiation hardening (electronics); Transistors;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
DOI :
10.1109/ICECS.2014.7049906
