• DocumentCode
    3568635
  • Title

    Design of a high linearity Gm stage for a high speed current mode SAR ADC

  • Author

    Elkafrawy, Abdelrahman ; AlMarashli, Ahmad ; Ritter, Rudolf ; Anders, Jens ; Ortmanns, Maurits

  • Author_Institution
    Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
  • fYear
    2014
  • Firstpage
    136
  • Lastpage
    139
  • Abstract
    An approach towards high speed current mode based SAR ADCs is presented in this paper. The main focus is placed on the design of a high-speed high-linearity transconductance (Gm) stage for operation in a current based SAR ADC. The Gm stage converts the input voltage to a current which is then processed in a current based binary search algorithm SAR loop. Here, for high speed operation, large transconductance values are needed. Additionally, achieving high linearity over a wide input range requires linearization techniques, which increase the hardware effort and reduce the power efficiency. Thus, settling speed and linearity are the key determining factors for the design of a high-speed high-linearity Gm stage in a current based SAR ADC. Additionally, this paper presents an initial investigation of the Gm stage current settling under linear load. The theoretical analysis is compared against a schematic level implementation in a 1.2 V 90 nm CMOS technology. This Gm stage implementation is designed for an overall resolution of 10 bit in the current based SAR ADC over a Nyquist band from DC to 100 MHz.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; high-speed integrated circuits; integrated circuit design; linearisation techniques; CMOS technology; Nyquist band; analogue-digital conversion; current based binary search algorithm SAR loop; frequency 100 MHz; hardware effort; high speed current mode SAR ADC; high-speed high-linearity Gm transconductance stage design; linear load; linearization techniques; power efficiency reduction; schematic level implementation; settling speed; size 90 nm; voltage 1.2 V; wide input range; CMOS integrated circuits; Capacitors; Linearity; Noise; Switches; Transconductance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/ICECS.2014.7049940
  • Filename
    7049940