Title :
High-efficiency CMOS rectifier dedicated for multi-band ambient RF energy harvesting
Author :
Wang, Y. ; Sawan, M.
Author_Institution :
Polystim Neurotechnologies Lab., Polytech. Montreal, Montreal, QC, Canada
Abstract :
Several rectifier topologies dedicated for radio frequency (RF) energy harvesting have been proposed, but only a few have been reported to be able to harvest RF energy at low input power (LIP) levels. In this paper, we are focusing on fully gate cross-coupled (FGCC) rectifier structure, which gives good performance at LIP levels. In order to get an enough high output DC voltage, a 3-stage FGCC rectifier using low-threshold-voltage (LTV) transistors is designed. According to simulation results, with 850MHz input AC signal, the designed rectifier has power conversion efficiency (PCE) of 70% at 20μW (-17.0dBm) input power with 100kOhms load. Also, a multi-band RF energy harvesting topology is proposed. Simulation results show that PCE of the tri-channel rectifier achieves 66.3% at 4.8μW (-23.2dBm) input power per channel and 1V DC output voltage is generated at 5.1μW (-22.9dBm) input power per channel with only 100kOhms load, showing both high-efficiency and sensitivity.
Keywords :
CMOS logic circuits; UHF transistors; energy harvesting; integrated circuit design; logic design; logic gates; rectifiers; 3-stage FGCC rectifier; frequency 850 MHz; fully gate cross-coupled rectifier structure; high output DC voltage; high-efficiency CMOS rectifier; low input power levels; low-threshold-voltage transistor design; multiband ambient RF energy harvesting topology; power 20 muW; power 4.8 muW; power conversion efficiency; trichannel rectifier; voltage 1 V; Antennas; Energy harvesting; Radio frequency; Rectifiers; Simulation; Threshold voltage; Transistors; CMOS; RF energy harvesting; Rectifier; low-threshold-voltage transistors;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
DOI :
10.1109/ICECS.2014.7049951
