Experimental and simulation results on Si integrated inductor efficiency for smart RF-ICs

Author

Royet, A.S. ; Barbe, J.C. ; Valorge, O. ; Remy, L. ; Constant, I.

Author_Institution

DCOS Div., CEA, Grenoble, France

fYear

2014

Firstpage

367

Lastpage

370

Abstract

This paper presents several experimental and simulation results on silicon integrated inductors. Measurements and 3D electromagnetic simulations highlight the efficiency of different layout techniques and technological choices to improve integrated inductor Q factor. Different kinds of pattern ground shields and different substrate configurations are measured and studied. Electromagnetic phenomena involved in such passive integrated devices are described thanks to the complementary measurement/simulation approach. Pattern ground shields have to be carefully used: this layout solution can degrade the integrated inductor quality depending on substrate characteristics of the integration technology.

Keywords

Q-factor; electromagnetic shielding; inductors; integrated circuit layout; radiofrequency integrated circuits; 3D electromagnetic simulations; Si; integrated inductor Q-factor; integrated inductor efficiency; layout technique; pattern ground shields; silicon integrated inductor; smart RF-IC; Conductivity; Inductors; Magnetic noise; Magnetic shielding; Q-factor; Silicon; Substrates; RF integrated inductors; pattern ground shield (PGS); quality factor; substrate losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7049998

Filename

7049998