• DocumentCode
    3568773
  • Title

    FinFET based SRAM design: A survey on device, circuit, and technology issues

  • Author

    Bayoumi, Magdy ; Dutta, Anandi

  • Author_Institution
    Dept. of Comput. Eng., Univ. of Louisiana at Lafayette, Louisiana, LA, USA
  • fYear
    2014
  • Firstpage
    387
  • Lastpage
    390
  • Abstract
    In this paper, we did a survey on FinFET based SRAM related device, circuit, and technology issues. As this is a novel and emerging technology to cope up with the technology scaling; therefore, we believe this literature review is much required and will help in future research in this area. The issues of optimized threshold voltage and supply voltage, metal gate work-function variation, surface orientation effect on circuit design, fin configuration optimization, independent gate-based design, asymmetrical designing concept, fabrication level optimization issues, tunnel FinFET, junctionless FinFET, pseudo-spin FinFET, etc. have been discussed throughout the paper.
  • Keywords
    MOSFET; SRAM chips; circuit optimisation; integrated circuit design; work function; FinFET based SRAM device design; asymmetrical designing concept; circuit design; fabrication level optimization issues; fin configuration optimization; independent gate-based design; junctionless FinFET; literature review; metal gate work-function variation; pseudo-spin FinFET; supply voltage optimization; surface orientation effect; technology scaling; threshold voltage optimization; tunnel FinFET; FinFETs; Logic gates; Optimization; SRAM cells; Threshold voltage; Access Time; FinFET; Read/Write Margin; SRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/ICECS.2014.7050003
  • Filename
    7050003