Characterization of two opto-electronic structures for high-frequency applications

Author

Martinez-Castillo, J. ; Diaz-Sanchez, Alejandro ; Finol, J.L.

Author_Institution

Dept. de Posgrado, Univ. Cristobal Colon, Veracruz, Mexico

Volume

1

fYear

2004

Abstract

Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. The most important characteristics are showed. Where the bandwidth, noise level, and linearity are considered. Simulations were performed using BSIM3v3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed for a 0.8 μm BiCMOS AMS process, using HSPICE simulator. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 2 GHz.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; S-parameters; SPICE; circuit feedback; circuit simulation; elemental semiconductors; feedback amplifiers; integrated circuit design; integrated optoelectronics; network topology; photodiodes; silicon; 0.8 micron; 2 GHz; 40 dB; BiCMOS AMS process; CMOS transimpedance amplifier structures; EKV models; HSPICE simulator; S-parameters; Si; common gate topology; high frequency applications; modified BSIM3v3 model; negative feedback; optoelectronic structure characterization; optoelectronics integrated circuits; silicon photodiode; Bandwidth; Circuit simulation; Circuit topology; Linearity; Negative feedback; Noise level; Optoelectronic devices; Photodiodes; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. MWSCAS '04. The 2004 47th Midwest Symposium on

Print_ISBN

0-7803-8346-X

Type

conf

DOI

10.1109/MWSCAS.2004.1354006

Filename

1354006