DocumentCode :
3568879
Title :
Probabilistic model checking of single event transient propagation at RTL level
Author :
Hamad, Ghaith Bany ; Mohamed, Otmane Ait ; Savaria, Yvon
Author_Institution :
Groupe de Rech. en Microelectron. et Microsystemes, Polytech. Montreal, Montréal, QC, Canada
fYear :
2014
Firstpage :
451
Lastpage :
454
Abstract :
Soft errors, induced by radiations, have a growing impact on the reliability of CMOS integrated circuits. The progressive shrinking of device sizes in advanced technologies leads to miniaturization and performance improvements. However, ultra-deep sub-micron technologies are more vulnerable to soft errors. In this paper, we propose a new methodology to model and analyze Single Event Transients (SETs) propagation at RTL level. Gate level characterization libraries are utilized to model the underlying probabilistic behavior of SET pulse propagation as Probabilistic Automata (PA). A probabilistic model checker is adapted to analyze the probability of SET pulse propagation for all injection scenarios. Experimental results are presented for different combinational circuits. Our proposed methodology is orders of magnitude faster than contemporary techniques that can be used to analyze SET pulse propagation probability.
Keywords :
CMOS integrated circuits; combinational circuits; probability; radiation hardening (electronics); CMOS integrated circuits; RTL level; SET pulse propagation; combinational circuits; gate level characterization libraries; probabilistic automata; probabilistic model checking; single event transient propagation; soft errors; Adaptation models; Adders; Analytical models; Libraries; Logic gates; Markov processes; Probabilistic logic;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
Type :
conf
DOI :
10.1109/ICECS.2014.7050019
Filename :
7050019
Link To Document :
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