Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient

Author

Fadhuile, Francois ; Taris, Thierry ; Deval, Yann ; Enz, Christian ; Belot, Didier

Author_Institution

Lab. IMS, Univ. of Bordeaux, Talence, France

fYear

2014

Firstpage

478

Lastpage

481

Abstract

The complexity of a radiofrequency (RF) circuit design comes from the large number of parameters to be adjusted. The constant node shrink in CMOS process and variation of technology skills significantly contribute to this complexity. The paper reports on a reliable and portable design methodology based on the inversion coefficient and applies it to the design of a Low Noise Amplifier (LNA). Both meeting design specifications and the optimization of the Figure of Merit (FOM) are embedded in the proposed design flow. The methodology is validated for a 2.4GHz LNA in 28nm CMOS technology of STMicroelectronics.

Keywords

CMOS integrated circuits; UHF amplifiers; integrated circuit design; integrated circuit reliability; low noise amplifiers; low-power electronics; optimisation; CMOS process technology; FOM; STMicroelectronics; constant node shrink; design methodology reliability; figure of merit; frequency 2.6 GHz; inversion coefficient; low noise amplifier design specification; low power RF LNA; optimization; radiofrequency circuit design; size 28 nm; technology skill variation; Integrated circuit modeling; MOSFET; Noise; Radio frequency; Semiconductor device modeling; Design Methodology; FOM; Inversion coefficient IC; LNA; Low-power; RF;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7050026

Filename

7050026