Numerical analysis of nano schottky junctions for developing novel sub-20 nm electronic devices

Nano metal-semiconductor contacts in sub-20 nm range have showed unusual electrical characteristics compared to conventional diodes. New devices based on nano Schottky junction have been proposed to overcome the limitations of CMOS devices. Here we introduce a new theoretical approach for studying the enhancement of the electric field at the interface, and then the net current along the junction. The results revealed a dominant tunneling current at the reverse bias for low n-dope semiconductor substrates. Whereas for high n-dope substrates, the thermionic current is dominant at the forward bias. We have used a finite element simulation software (COMSOL) to analyze the electrical characteristics of nano Schottky diodes, and compare the theoretical results with experimental data.